1 2 3 absolute maximum ratings ( tj = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage since wave, 50 to 60hz 600 v i t(rms) r.m.s on-state current t j = 125 c , full sine wave 8.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 6 5 a p g(av) average gate power dissipation tj=125 c 1 w i gm peak gate current tj=125 c 2 a t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c july , 2010. rev. 2 1/5 TD8A60 standard triac features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 8 a ) high commutation dv/dt general description this device is fully isolated p a cka ge suitable for ac sw itching app lication, phase control application such as fan speed and temperat ure modu lation cont rol, lighting control and static switching relay. i t(rms) = 8 a i tsm = 65a v drm = 600v to- 252 copyright @ apollo electron co., ltd. all rights reserved. 2.t2 3.gate 1.t1 symbol
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 1 ma v tm peak on-state voltage i tm = 8 a, tp=380? --- 1.5 v i + gt1 gate trigger current v d = 12 v, r l =100 30 ma i - gt1 30 i - gt3 30 v + gt1 gate trigger voltage v d =12 v, r l =100 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage tj = 125 c, v d = v drm, r l= 3.3k 0.2 --- v dv/dt critical rate of rise off-state voltage t j = 125 c, v d =2/3 v drm 200 -- -- v/ ? i h holding current vd=12v, igt=50ma -- -- 50 ma TD8A60 2/5
3/5 TD8A60 -50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v _ gt3 v gt (t o c) v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 20 40 60 80 100 60hz 50hz surge on-state current [a] time (cycles) 012345678910 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 012345678910 0 1 2 3 4 5 6 7 8 9 10 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2 a) 25 p g (av) (1 w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma]
TD8A60 4/5 -50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 transient thermal impedance [ o c/w] time (sec) fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature
TD8A60 5/5 to-252 package dimension
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